Title :
80 GHz co-designed LNA and antenna for automotive radar
Author :
Martin, N. ; Taris, T. ; Begueret, J.-B. ; Person, C. ; Belot, D.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Bordeaux, France
Abstract :
Co-designed Low Noise Amplifier (LNA) and dipole antenna in a RadioFrequency (RF) dedicated silicon technology, BÌCMOS9MW, are presented in this paper. The LNA is a two-stages cascode based on a SiGe:C 130 nm HBT optimized for maximum gain. The antenna is a dipole designed to match the LNA input impedance and maximize radiation diagram. Both are co-integrated directly on the silicon chip. The circuit is dedicated to automotive radar applications at 80GHz. The measurement results of the co-integrated LNA exhibit a gain and NF of 26dB and 5dB respectively with a power consumption of 20mW, while the antenna shows a simulated gain of 0dB.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; antenna radiation patterns; carbon; dipole antennas; heterojunction bipolar transistors; low noise amplifiers; millimetre wave antennas; millimetre wave radar; radar antennas; road vehicle radar; BiCMOS; HBT; LNA codesigned; LNA input impedance; RF dedicated silicon technology; SiGe:C; automotive radar dipole antenna; frequency 80 GHz; gain 0 dB; power 20 mW; power consumption; radiation diagram maximization; radiofrequency dedicated silicon technology; silicon chip; size 130 nm; two-stage cascode; Antenna measurements; Dipole antennas; Gain; Impedance; Noise measurement; Silicon;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
DOI :
10.1109/ICECS.2014.7050038
