Title :
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
Author :
Jiongjiong Mo ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain gm/gd has been obtained with a reduced output conductance gd and improved breakdown voltage Vbd. For Lg = 50 nm, a high oscillation frequency fmax = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.
Keywords :
III-V semiconductors; MOSFET; electric breakdown; electrical contacts; electrochemical electrodes; gallium arsenide; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor growth; submillimetre wave transistors; In0.53Ga0.47As-InP; breakdown voltage; drain electrode; frequency 300 GHz; gate-connected field-plate; impact ionization-band-to-band tunneling immunity; laterally asymmetric MOSFET; reduced output conductance; regrown contact; size 50 nm; source-drain engineering; wider bandgap material; Impact ionization; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFET; Photonic band gap; InGaAs MOSFET; oscillation frequency; oscillation frequency.; source/drain engineering; voltage gain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2308925
