Title :
A charge conserving macromodel for MOSFET´s
Author :
Kim, Joon-Yub ; Geiger, Randall L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Abstract :
A charge conserving macromodel suitable for the simulation of the charge injection behavior of MOSFET switches is presented. Simulation results using the macromodel are compared with the experimental data in the literature. The performance of the macromodel at high switching speed is demonstrated
Keywords :
MOSFET; capacitance; electric charge; field effect transistor switches; semiconductor device models; MOSFET model; MOSFET switches; charge conserving macromodel; charge injection behavior simulation; high switching speed; Capacitors; Circuit simulation; Computational modeling; Computer simulation; Impedance; MOSFET circuits; Parasitic capacitance; SPICE; Switches; Switching circuits;
Conference_Titel :
Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
Print_ISBN :
0-7803-2972-4
DOI :
10.1109/MWSCAS.1995.504375
