Title :
A subthreshold surface potential modeling of drain/source edge effect on double gate MOS transistor
Author :
Namana, Satyanand ; Baishya, Srimanta ; Koley, Kalyan
Author_Institution :
Electron. & Commun. Eng., NIT Silchar, Silchar, India
Abstract :
An analytical sub-threshold surface potential model for double gate MOSFET (DG-MOSFET) is presented incorporating the edge effects at the source and drain ends. As the gate length of DG MOSFETs is scaled down, the barrier lowering becomes very important. A fitting parameter α is introduced to compensate this effect. The results obtained with this modeled equation are well matched with the results from 2-D numerical simulator TCAD.
Keywords :
MOSFET; semiconductor device models; surface potential; 2D numerical simulator TCAD; DG MOSFET; double gate MOS transistor; double gate MOSFET; drain/source edge effect; fitting parameter; gate length; subthreshold surface potential modeling; Electric potential; Equations; Logic gates; MOSFET circuits; Mathematical model; Numerical models; Semiconductor process modeling; Depletion layer; Double Gate MOSFET (DG MOSFET); Surface Potential; Threshold voltage;
Conference_Titel :
Electronics and Information Engineering (ICEIE), 2010 International Conference On
Print_ISBN :
978-1-4244-7679-4
Electronic_ISBN :
978-1-4244-7681-7
DOI :
10.1109/ICEIE.2010.5559844
