Title :
Variability of nanoscale triple gate FinFETs: Prediction and analysis method
Author :
Tassis, D. ; Messaris, I. ; Fasarakis, N. ; Tsormpatzoglou, A. ; Nikolaidis, S. ; Dimitriadis, C.
Author_Institution :
Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; Verilog-A; analytical compact drain current model; electrical characteristics variability prediction; lightly doped nanoscale FinFET; nanoscale triple gate FinFET; undoped nanoscale FinFET; Analytical models; Computational modeling; FinFETs; Integrated circuit modeling; Inverters; Logic gates; Threshold voltage; Compact model; FinFET; variability;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
DOI :
10.1109/ICECS.2014.7050084
