• DocumentCode
    3569256
  • Title

    Small area charge pump using low voltage capacitors

  • Author

    Dumas, Norbert ; Frick, Vincent ; Heitz, Jerome ; Lallement, Christophe ; Hebrard, Luc

  • Author_Institution
    Lab. des Sci. de l´ingenieur, Univ. de Strasbourg, Illkirch, France
  • fYear
    2014
  • Firstpage
    786
  • Lastpage
    789
  • Abstract
    There are two main families of charge pumps: parallel and stacking. In this paper, we propose to compare a design that is a combination of both with the more common parallel structure. Its main advantage is to make use of only low voltage capacitors as, for a stacking architecture but without its drawback. The hereafter detailed model shows that with the same capacitors the proposed structure would be less efficient. However this handicap is counterbalanced by the fact that low voltage capacitors have a better sheet capacitance. It is demonstrated that the silicon area of the proposed structure is smaller, up to three stages included, compared to a parallel type of charge pump with ideal switches.
  • Keywords
    capacitors; charge pump circuits; elemental semiconductors; low-power electronics; semiconductor switches; silicon; Si; common parallel structure; ideal switches; low voltage capacitors; sheet capacitance; silicon area; small area charge pump; stacking architecture; Capacitance; Capacitors; Charge pumps; Low voltage; Silicon; Transistors; Voltage control; DC-DC converter; HV CMOS; charge pump; high-voltage integrated circuit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/ICECS.2014.7050103
  • Filename
    7050103