Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process

Author

Kulkarni, S.H. ; Chen, Z. ; Srinivasan, B. ; Pedersen, B. ; Bhattacharya, U. ; Zhang, K.

Author_Institution

Adv. Design, Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA

fYear

2015

Abstract

This work introduces the first high-volume manufacturable metal-fuse technology in a 22nm tri-gate high-k metal-gate CMOS process. A high-density array featuring a 16.4μm² 1T1R bit cell is presented that delivers a record low program voltage of 1.6V. This low-voltage operability allows the array to be coupled with logic-voltage power delivery circuits. A charge pump voltage doubler operating on a 1V voltage rail is demonstrated in this paper with healthy fusing yield.

Keywords

CMOS integrated circuits; charge pump circuits; electric fuses; high-k dielectric thin films; programmable circuits; voltage multipliers; 1T1R bit cell; charge pump; high-k metal-gate CMOS process; high-volume manufacturable metal-fuse technology; logic-voltage power delivery circuits; low-voltage metal-fuse technology; size 16.4 mum; size 22 nm; trigate process; voltage 1 V; voltage 1.6 V; voltage doubler; Arrays; Charge pumps; Fuses; Microprocessors; Programming; System-on-chip; High-density OTP-ROM; low-voltage metal fuse;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI Technology), 2015 Symposium on

ISSN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2015.7223645

Filename

7223645