Millimeter-wave GaAs monolithic multipliers

Author

Papapolymerou, John ; East, Jack ; Katehi, L.P.B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

2

fYear

1998

Firstpage

395

Abstract

This paper describes the design, fabrication and experimental results for planar monolithic multipliers with output frequencies in W- and D-band. The multipliers are fabricated using FGC (Finite Ground Coplanar) lines which provide a low loss, low dispersion near-TEM structure. This structure allows circuit fabrication on full thickness wafers with no via holes. A variety of circuits have been designed and fabricated. Different W-band multipliers have an output efficiency of 22.9%, a peak output power of 66 milliwatts and an output bandwidth greater than 8 GHz in W-band. Initial D-band results show an uncalibrated output of approximately 100 /spl mu/W at 160 GHz.

Keywords

III-V semiconductors; MMIC frequency convertors; coplanar waveguides; dispersion (wave); frequency multipliers; gallium arsenide; losses; millimetre wave frequency convertors; varactors; 100 muW; 160 GHz; 22.9 percent; 66 mW; D-band; FGC; GaAs; W-band; circuit fabrication; dispersion; finite ground coplanar lines; full thickness wafers; loss; mm-wave frequency multipliers; near-TEM structure; output bandwidth; output efficiency; output frequencies; peak output power; planar monolithic multipliers; uncalibrated output; Circuit optimization; Coplanar waveguides; Dielectric loss measurement; Diodes; Doping; Epitaxial layers; Fabrication; Frequency; Gallium arsenide; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705017

Filename

705017