Title :
A 640 GHz planar-diode fundamental mixer/receiver
Author :
Siegel, P.H. ; Mehdi, I. ; Dengler, R.J. ; Lee, T.H. ; Humphrey, D.A. ; Pease, A. ; Zimmermann, R. ; Zimmermann, P.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported. A best mixer noise temperature of 1640 K DSB, conversion loss of 8.1 dB, has been achieved at room temperature at an IF of 8 GHz and the noise is below 2100 K DSB from 1.5-11 GHz IF. Measurements employing a commercial 4-8 GHz Miteq amplifier and external bias T yield a double sideband receiver noise temperature below 3100 K from 2-8 GHz with a best value of 2720 K at 4 GHz. Measured local oscillator power was only 350 microwatts measured on a Keating acousto-optic power meter. These results are believed to represent the best reported performance for a room-temperature planar-Schottky diode receiver at this frequency.
Keywords :
Gunn oscillators; Schottky diode mixers; circuit noise; submillimetre wave circuits; submillimetre wave receivers; varactors; 1.5 to 11 GHz; 350 muW; 640 GHz; 8.1 dB; Gunn diode oscillator; InP; Miteq amplifier; conversion loss; double sideband receiver noise temperature; folded-Fabry-Perot diplexer; local oscillator power; mixer noise temperature; planar-diode fundamental mixer/receiver; room-temperature planar-Schottky diode receiver; solid-state receiver; whisker-contacted Schottky-varactor-diode sextupler; Frequency; Gunn devices; Indium phosphide; Local oscillators; Loss measurement; Noise measurement; Power measurement; Schottky diodes; Solid state circuits; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705020
