• DocumentCode
    3569452
  • Title

    Electrical Overstress Prevention & Test Best Practices

  • Author

    Khoo, Leslie

  • Author_Institution
    Nat. Semicond.
  • fYear
    2008
  • Firstpage
    146
  • Lastpage
    146
  • Abstract
    This talk briefly covers some causes and effects of EOS. Specifically, those that are process induced and test program induced. Three types of process induced failure are briefly highlighted, namely gate oxide rupture, damaged metal and junction damage. The effect of ESD though prevalent, is not discussed. The focus of the presentation is the elimination of voltage spikes in testing through proper programming and hardware design. As such, best practices commonly adopted by test engineers are included for sharing and discussion.
  • Keywords
    electrostatic discharge; failure analysis; integrated circuit manufacture; integrated circuit testing; EOS sensitivity; electrical overstress prevention; semiconductor circuit manufacturing; semiconductor circuit testing; voltage spike elimination; Best practices; Circuit testing; Costs; Earth Observing System; Electronics industry; Electrostatic discharge; Fabrication; Semiconductor device manufacture; Semiconductor device testing; Voltage; Electrical overstress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Asian Test Symposium, 2008. ATS '08. 17th
  • ISSN
    1081-7735
  • Print_ISBN
    978-0-7695-3396-4
  • Type

    conf

  • DOI
    10.1109/ATS.2008.49
  • Filename
    4711573