DocumentCode :
3569452
Title :
Electrical Overstress Prevention & Test Best Practices
Author :
Khoo, Leslie
Author_Institution :
Nat. Semicond.
fYear :
2008
Firstpage :
146
Lastpage :
146
Abstract :
This talk briefly covers some causes and effects of EOS. Specifically, those that are process induced and test program induced. Three types of process induced failure are briefly highlighted, namely gate oxide rupture, damaged metal and junction damage. The effect of ESD though prevalent, is not discussed. The focus of the presentation is the elimination of voltage spikes in testing through proper programming and hardware design. As such, best practices commonly adopted by test engineers are included for sharing and discussion.
Keywords :
electrostatic discharge; failure analysis; integrated circuit manufacture; integrated circuit testing; EOS sensitivity; electrical overstress prevention; semiconductor circuit manufacturing; semiconductor circuit testing; voltage spike elimination; Best practices; Circuit testing; Costs; Earth Observing System; Electronics industry; Electrostatic discharge; Fabrication; Semiconductor device manufacture; Semiconductor device testing; Voltage; Electrical overstress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Asian Test Symposium, 2008. ATS '08. 17th
ISSN :
1081-7735
Print_ISBN :
978-0-7695-3396-4
Type :
conf
DOI :
10.1109/ATS.2008.49
Filename :
4711573
Link To Document :
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