DocumentCode
3569452
Title
Electrical Overstress Prevention & Test Best Practices
Author
Khoo, Leslie
Author_Institution
Nat. Semicond.
fYear
2008
Firstpage
146
Lastpage
146
Abstract
This talk briefly covers some causes and effects of EOS. Specifically, those that are process induced and test program induced. Three types of process induced failure are briefly highlighted, namely gate oxide rupture, damaged metal and junction damage. The effect of ESD though prevalent, is not discussed. The focus of the presentation is the elimination of voltage spikes in testing through proper programming and hardware design. As such, best practices commonly adopted by test engineers are included for sharing and discussion.
Keywords
electrostatic discharge; failure analysis; integrated circuit manufacture; integrated circuit testing; EOS sensitivity; electrical overstress prevention; semiconductor circuit manufacturing; semiconductor circuit testing; voltage spike elimination; Best practices; Circuit testing; Costs; Earth Observing System; Electronics industry; Electrostatic discharge; Fabrication; Semiconductor device manufacture; Semiconductor device testing; Voltage; Electrical overstress;
fLanguage
English
Publisher
ieee
Conference_Titel
Asian Test Symposium, 2008. ATS '08. 17th
ISSN
1081-7735
Print_ISBN
978-0-7695-3396-4
Type
conf
DOI
10.1109/ATS.2008.49
Filename
4711573
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