DocumentCode
3569514
Title
Quantitative endurance failure model for filamentary RRAM
Author
Degraeve, R. ; Fantini, A. ; Roussel, Ph ; Goux, L. ; Costantino, A. ; Chen, C.Y. ; Clima, S. ; Govoreanu, B. ; Linten, D. ; Thean, A. ; Jurczak, M.
Author_Institution
IMEC, Leuven, Belgium
fYear
2015
Abstract
Endurance in filamentary RRAM is modeled in the framework of the hourglass model. Two failure modes are distinguished: (i) stochastic set failure is caused by defect generation near the bottom electrode, and (ii) resistive window changes are controlled by T-activated changes of the number of filament vacancies. Bottom electrode/oxide interface optimization is the prime knob for endurance improvement. This model enables quantitative and predictive endurance simulations.
Keywords
electrodes; failure analysis; resistive RAM; electrode; filament vacancy; filamentary RRAM; interface optimization; quantitative endurance failure model; resistive random-access memory; resistive window; stochastic set failure; Degradation; Electrodes; Markov processes; Mathematical model; Reservoirs; Resistance; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI Technology), 2015 Symposium on
ISSN
0743-1562
Type
conf
DOI
10.1109/VLSIT.2015.7223673
Filename
7223673
Link To Document