Title :
Quantitative endurance failure model for filamentary RRAM
Author :
Degraeve, R. ; Fantini, A. ; Roussel, Ph ; Goux, L. ; Costantino, A. ; Chen, C.Y. ; Clima, S. ; Govoreanu, B. ; Linten, D. ; Thean, A. ; Jurczak, M.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Endurance in filamentary RRAM is modeled in the framework of the hourglass model. Two failure modes are distinguished: (i) stochastic set failure is caused by defect generation near the bottom electrode, and (ii) resistive window changes are controlled by T-activated changes of the number of filament vacancies. Bottom electrode/oxide interface optimization is the prime knob for endurance improvement. This model enables quantitative and predictive endurance simulations.
Keywords :
electrodes; failure analysis; resistive RAM; electrode; filament vacancy; filamentary RRAM; interface optimization; quantitative endurance failure model; resistive random-access memory; resistive window; stochastic set failure; Degradation; Electrodes; Markov processes; Mathematical model; Reservoirs; Resistance; Tin;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
DOI :
10.1109/VLSIT.2015.7223673
