DocumentCode
3570447
Title
Noise temperature estimates for a next generation very large microwave array [HEMT LNAs]
Author
Weinreb, S.
Author_Institution
Dept. of Phys. & Astron., Massachusetts Univ., Amherst, MA, USA
Volume
2
fYear
1998
Firstpage
673
Abstract
This paper estimates the noise temperature as a function of frequency for amplifiers covering the 1 to 10 GHz range utilizing state-of-the-art HEMT transistors operating at temperatures of 300 K, 80 K, and 20 K. The analysis includes the effect of loss and bandwidth of the input matching network.
Keywords
HEMT integrated circuits; MMIC amplifiers; impedance matching; integrated circuit noise; microwave antenna arrays; radiotelescopes; 1 to 10 GHz; 20 to 300 K; HEMT transistors; MMIC LNA; SETI; VLA; amplifiers; bandwidth; frequency; input matching network; loss; next generation microwave array; noise temperature estimates; very large microwave array; Bandwidth; Circuit noise; Electrical resistance measurement; Gallium arsenide; HEMTs; Indium phosphide; Microwave antenna arrays; Noise generators; Noise measurement; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705081
Filename
705081
Link To Document