• DocumentCode
    3570469
  • Title

    Laser-Assisted Device Alteration (LADA) for fault isolation and quick design fix in marginality failure

  • Author

    Foo Loke Sheng ; Mun, Rachel Siew Sok ; Teck, Daniel Ting Kung

  • Author_Institution
    Freescale Semicond. Malaysia Sdn. Bhd., Petaling Jaya, Malaysia
  • fYear
    2015
  • Firstpage
    9
  • Lastpage
    12
  • Abstract
    Marginal failure is common in failure analysis in which the failure is dependant to voltage or timing. Instead of using conventional die top microprobing to isolate the failure location, Laser Assisted Device Alteration (LADA) together with modified test pattern to isolate the failure location by incorporating Atomic Force Probe (AFP) and Transmission Electron Microscopy (TEM) to determine the failure. In addition, LADA helps to provide information about the sensitive circuitry. This leads to design fix that will overcome the marginality of failure and thus improve overall yield.
  • Keywords
    atomic force microscopy; failure analysis; laser materials processing; probes; semiconductor device testing; transmission electron microscopy; AFP; LADA; TEM; atomic force probe; conventional die top microprobing; failure analysis; failure location; fault isolation; laser-assisted device alteration; marginality failure; modified test pattern; quick design fix; transmission electron microscopy; Circuit faults; Correlation; Decoding; Delays; Logic gates; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224319
  • Filename
    7224319