DocumentCode
3570469
Title
Laser-Assisted Device Alteration (LADA) for fault isolation and quick design fix in marginality failure
Author
Foo Loke Sheng ; Mun, Rachel Siew Sok ; Teck, Daniel Ting Kung
Author_Institution
Freescale Semicond. Malaysia Sdn. Bhd., Petaling Jaya, Malaysia
fYear
2015
Firstpage
9
Lastpage
12
Abstract
Marginal failure is common in failure analysis in which the failure is dependant to voltage or timing. Instead of using conventional die top microprobing to isolate the failure location, Laser Assisted Device Alteration (LADA) together with modified test pattern to isolate the failure location by incorporating Atomic Force Probe (AFP) and Transmission Electron Microscopy (TEM) to determine the failure. In addition, LADA helps to provide information about the sensitive circuitry. This leads to design fix that will overcome the marginality of failure and thus improve overall yield.
Keywords
atomic force microscopy; failure analysis; laser materials processing; probes; semiconductor device testing; transmission electron microscopy; AFP; LADA; TEM; atomic force probe; conventional die top microprobing; failure analysis; failure location; fault isolation; laser-assisted device alteration; marginality failure; modified test pattern; quick design fix; transmission electron microscopy; Circuit faults; Correlation; Decoding; Delays; Logic gates; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Type
conf
DOI
10.1109/IPFA.2015.7224319
Filename
7224319
Link To Document