An plasma etching modeling method based on experiment result

In plasma etching process, various physical and chemical mechanisms affect the feature profile evolution. The relative importance of these mechanisms is uncertain. In order to study the physics mechanism of surface etching process, a plasma etching modeling method is proposed, which combines optimization technique with simulation. This paper developed a cumulative GA with evaluated probability to solve this expensive optimization problem. The experimental results illustrate that simulating result according to new etching model coming from the proposed method is very similar with the experiment. It also proves that the proposed method is effective and can be used to model etching model.