DocumentCode :
3571128
Title :
Optical 3R regeneration with single InGaAsP/InP electroabsorption modulator
Author :
Nishimura, Kohsuke ; Tsurusawa, Munefumi ; Usami, Masashi
Author_Institution :
KDDI R&D Labs. Inc., Saitama, Japan
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
677
Lastpage :
680
Abstract :
A new optical 3R regeneration technique, which is referred to as RF-XAM 3R regeneration, that requires only one electroabsorption modulator (EAM) for both clock recovery and gating was proposed for the first time. The idea was experimentally verified at 20 Gbit/s and we have confirmed that the RF-XAM 3R regenerator possesses retiming function. The simple configuration of our proposed scheme is expected to contribute not only to reduction in size and power consumption, but also high stability and easy tunability.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; low-power electronics; optical repeaters; synchronisation; tuning; 20 Gbit/s; InGaAsP-InP; InGaAsP/InP; RF-XAM 3R regeneration; clock recovery; electroabsorption modulator; optical 3R regeneration; power consumption; retiming function; stability; tunability; Clocks; High speed optical techniques; Indium phosphide; Nonlinear optics; Optical interferometry; Optical modulation; Optical pulses; Optical signal processing; Repeaters; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014608
Filename :
1014608
Link To Document :
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