Optical 3R regeneration with single InGaAsP/InP electroabsorption modulator

Author

Nishimura, Kohsuke ; Tsurusawa, Munefumi ; Usami, Masashi

Author_Institution

KDDI R&D Labs. Inc., Saitama, Japan

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

677

Lastpage

680

Abstract

A new optical 3R regeneration technique, which is referred to as RF-XAM 3R regeneration, that requires only one electroabsorption modulator (EAM) for both clock recovery and gating was proposed for the first time. The idea was experimentally verified at 20 Gbit/s and we have confirmed that the RF-XAM 3R regenerator possesses retiming function. The simple configuration of our proposed scheme is expected to contribute not only to reduction in size and power consumption, but also high stability and easy tunability.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; low-power electronics; optical repeaters; synchronisation; tuning; 20 Gbit/s; InGaAsP-InP; InGaAsP/InP; RF-XAM 3R regeneration; clock recovery; electroabsorption modulator; optical 3R regeneration; power consumption; retiming function; stability; tunability; Clocks; High speed optical techniques; Indium phosphide; Nonlinear optics; Optical interferometry; Optical modulation; Optical pulses; Optical signal processing; Repeaters; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014608

Filename

1014608