• DocumentCode
    3571406
  • Title

    Simulation of single-electron 2D arrays and resonant-tunneling diode using modified models

  • Author

    Abramov, I.I. ; Baranoff, A.L. ; Kolomeytseva, N.V. ; Romanova, I.A. ; Shcherbakova, I.Y. ; Klimovich, A.G.

  • Author_Institution
    Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2012
  • Firstpage
    746
  • Lastpage
    747
  • Abstract
    Nanoelectronic devices based on the effects of single-electron and resonant tunneling are analyzed. Current-voltage characteristics of single-electron 2D arrays and resonant-tunneling diode (RTD) are calculated using modified models.
  • Keywords
    nanoelectronics; resonant tunnelling diodes; semiconductor device models; single electron devices; RTD; current-voltage characteristics; modified model; nanoelectronic device; resonant-tunneling diode simulation; single-electron 2D array simulation; Electronic mail; Gold; Mathematical model; Microwave technology; Numerical models; Resonant tunneling devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3571406