Title :
Simulation of single-electron 2D arrays and resonant-tunneling diode using modified models
Author :
Abramov, I.I. ; Baranoff, A.L. ; Kolomeytseva, N.V. ; Romanova, I.A. ; Shcherbakova, I.Y. ; Klimovich, A.G.
Author_Institution :
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Nanoelectronic devices based on the effects of single-electron and resonant tunneling are analyzed. Current-voltage characteristics of single-electron 2D arrays and resonant-tunneling diode (RTD) are calculated using modified models.
Keywords :
nanoelectronics; resonant tunnelling diodes; semiconductor device models; single electron devices; RTD; current-voltage characteristics; modified model; nanoelectronic device; resonant-tunneling diode simulation; single-electron 2D array simulation; Electronic mail; Gold; Mathematical model; Microwave technology; Numerical models; Resonant tunneling devices; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Print_ISBN :
978-1-4673-1199-1
