Film properties and integration of a composite PECVD FSG film

Author

Wistrom, R. ; Bomberger, G. ; Cohen, S. ; Lavoie, M. ; Gambino, J. ; Adams, E. ; Gibson, M. ; Stamper, A. ; Zhu, W. ; Tian, J. ; Karim, Z. ; Bourque, R. ; Gupta, A. ; MacWilliams, K.

Author_Institution

Microelectron. Div., IBM Corp., Essex Junction, VT, USA

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

66

Lastpage

68

Abstract

A single pass-multistation deposition tool was used to deposit an IMD film which consisted of multiple FSG layers with optimized interfaces between the layers. The composite film had improved stability, F diffusion resistance, and electrical properties compared with monolithic FSG films. This film has been successfully integrated into a 0.13 μm Cu technology which uses a spin-on low k dielectric for the thin wires and FSG for the fat wires.

Keywords

copper; dielectric thin films; diffusion; integrated circuit interconnections; internal stresses; permittivity; plasma CVD coatings; silicon compounds; thermal stability; 0.13 micron; Cu; Cu technology; F diffusion resistance; IMD film; RI stability; SiO₂:F; composite PECVD FSG film; electrical properties; fat wires; fluorinated silicate glass; multiple FSG layers; optimized interfaces; single pass-multistation deposition tool; spin-on low k dielectric; stability; thin wires; Aluminum; Dielectric constant; Electric breakdown; Microelectronics; Polarization; Semiconductor films; Stability; Stress; Temperature; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014889

Filename

1014889