Stress induced failure analysis by stress measurements in copper dual damascene interconnects

Author

Suzuki, T. ; Ohtsuka, S. ; Yamanoue, A. ; Hosoda, T. ; Khono, T. ; Matsuoka, Y. ; Yanai, K. ; Matsuyama, H. ; Mori, H. ; Shimizu, N. ; Nakamura, T. ; Sugatani, S. ; Shono, K. ; Yagi, H.

Author_Institution

Akiruno Technol. Center, Fujitsu Labs. Ltd., Tokyo, Japan

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

229

Lastpage

230

Abstract

Stress migration behavior in Cu dual damascene interconnects is investigated in detail. It is revealed that the failure rate depends on structural parameters such as line width and via diameter. X-ray diffraction is employed to measure the thermal stress in lines and vias. The stress difference between lines and vias is found to be related to the failure rate of multi-level interconnects. An effective method to suppress the failure is also demonstrated.

Keywords

X-ray diffraction; copper; failure analysis; integrated circuit interconnections; integrated circuit reliability; stress measurement; thermal stresses; Cu; X-ray diffraction; dual damascene interconnects; failure rate; line width; multi-level interconnects; reliability; stress induced failure analysis; stress measurements; structural parameters; thermal stress; via diameter; Artificial intelligence; Copper; Fabrication; Failure analysis; Integrated circuit interconnections; Samarium; Stress measurement; Tensile stress; Testing; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014942

Filename

1014942