DocumentCode
3572013
Title
Associative Control for Fault-Tolerant CMOS/SOS RAM-s
Author
Haraszti, T.P.
Author_Institution
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California 92663, U. S. A.
fYear
1981
Firstpage
194
Lastpage
198
Abstract
A novel associative iterative circuit controls redundancy of large (16K bit-IMbit) CMOS/SOS memories. Yield optimization as function of defect density is combined with high speed - power performance. The circuit implementation for a 16K bit selftesting RAM adds only 2 nsec to access time, 1.5 mw to operating power and 0.6mm2 to silicon area.
Keywords
Associative memory; CMOS technology; Fault tolerance; Fault tolerant systems; Hardware; Integrated circuit yield; Military standards; Random access memory; Redundancy; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference, 1981. ESSCIRC '81. 7th European
Print_ISBN
3800712385
Type
conf
Filename
5435030
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