Title :
Quantitative Measurement with High Time Resolution of Internal Waveforms on MOS RAMs using a Modified Scanning Electron Microscope
Author :
Feuerbaum, H.P. ; Kantz, D. ; Kubalek, E. ; Wolfgang, E.
Author_Institution :
Siemens Research Laboratories, Munich and Gesamthochschule Duisburg
Abstract :
An electron beam as a noncontact nondestructive probe with a diameter less than 1 ¿m is used for quantitative waveform measurements on a dynamic 4K MOS RAM. The voltage sensitivity achieved is about 100 mV with 1 ns time resolution.
Keywords :
Aluminum; Capacitance; Circuit testing; Electron beams; Electrostatic measurements; Probes; Pulse amplifiers; Scanning electron microscopy; Time measurement; Voltage;
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
