• DocumentCode
    3572090
  • Title

    Stacked-Electrode Dynamic Memory Cells in Double Polysilicon Technology

  • Author

    Horninger, Karlheinrich ; Meusburger, G?¼nther ; Keller, Hermann

  • Author_Institution
    SIEMENS AG, Hofmannstr. 51 8000 M?ƒ??nchen 70 W. Germany
  • fYear
    1977
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    The double polysilicon technology can be used advantageously to design memory cells with increased storage times or higher bit density. Circuits of these cells are described and experimental as well as calculated results are presented.
  • Keywords
    Capacitance; Circuits; Costs; Degradation; Electrodes; MOS capacitors; Random access memory; Temperature; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
  • Print_ISBN
    380071132X
  • Type

    conf

  • Filename
    5435046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572090