Title :
Comparative analysis of GaN based MOSHEMT devices for RF applications
Author :
Panda, Juktajiban ; Jena, Kanjalochan ; Lenka, Trupti Ranjan
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, India
Abstract :
In this paper the behavior of Gate Capacitance with the nanoscale variation of barrier thickness in Gallium Nitride (GaN) based metal oxide semiconductor High electron mobility transistor (MOSHEMT) is presented. The Gate Capacitance has been calculated for Aluminum Nitride/Gallium Nitride (AlN/GaN) and Aluminum Indium Nitride/Gallium Nitride (AlInN/GaN) MOSHEMT through TCAD simulation. AlN/GaN MOSHEMT has an advantage of significant decrease in gate capacitance with increase in barrier thickness compared to AlInN/GaN MOSHEMT. This decrease in gate capacitance leads to improve the RF performance and hence reduce the propagation delay.
Keywords :
MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; AlInN-GaN; AlN-GaN; MOSHEMT; TCAD simulation; aluminum indium nitride; gallium nitride; gate capacitance; high electron mobility transistor; metal oxide semiconductor; propagation delay; Aluminum nitride; Capacitance; Gallium nitride; MOSFET; Radio frequency; 2DEG; Gallium Nitride (GaN); MOSHEMT; Quantum Capacitance (QC); TCAD;
Conference_Titel :
Electrical, Computer and Communication Technologies (ICECCT), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-6084-2
DOI :
10.1109/ICECCT.2015.7226141
