Title :
A New Static Memory Cell with 880 μm2 in Double Polysilicon Technology
Author :
Schrader, Lothar ; Meusburger, G?¼nther
Author_Institution :
SIEMENS AG, Hofmannstrasse 51, 8000 M?ƒ??nchen 70, West-Germany
Abstract :
A new static memory cell based on the Schmitt trigger is presented. A cell area of 880μm2 was achieved by using double polysilicon technology with 3μm line width and an average power consumption of 6μW/cell (UDD = 5V) was measured.
Keywords :
Area measurement; Capacitors; Energy consumption; Impedance; Logic circuits; Random access memory; Read-write memory; Transient analysis; Trigger circuits; Voltage;
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
