• DocumentCode
    3572234
  • Title

    Influence of the Silicon Nitride Oxidation on the Performances of NCLAD Isolation

  • Author

    Tixier, A. ; Senez, V. ; Baccus, B. ; Marmiroli, A. ; Carnevale, G.P. ; Colpani, P. ; Rebora, A.

  • Author_Institution
    IEMN/ISEN, Avenue Poincare, BP 69, Villeneuve d´´Ascq, France
  • fYear
    1996
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    A Deal and Grove model for the oxidation of the nitride isolation masks has been found, and has been implemented in the 2D Process simulator IMPACT-4 [2]. This implementation permitted to study the effects of this oxidation on the performances of NCLAD LOCOS/Recessed-LOCOS isolation structures.
  • Keywords
    Atmosphere; Atmospheric modeling; Calibration; Equations; Isolation technology; Microelectronics; Numerical simulation; Oxidation; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572234