Title :
Influence of the Silicon Nitride Oxidation on the Performances of NCLAD Isolation
Author :
Tixier, A. ; Senez, V. ; Baccus, B. ; Marmiroli, A. ; Carnevale, G.P. ; Colpani, P. ; Rebora, A.
Author_Institution :
IEMN/ISEN, Avenue Poincare, BP 69, Villeneuve d´´Ascq, France
Abstract :
A Deal and Grove model for the oxidation of the nitride isolation masks has been found, and has been implemented in the 2D Process simulator IMPACT-4 [2]. This implementation permitted to study the effects of this oxidation on the performances of NCLAD LOCOS/Recessed-LOCOS isolation structures.
Keywords :
Atmosphere; Atmospheric modeling; Calibration; Equations; Isolation technology; Microelectronics; Numerical simulation; Oxidation; Silicon; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
