Title :
Current Status of Heterojunction Bipolar and High-Electron Mobility Transistor Technologies
Author :
Pavlidis, Dimitris
Author_Institution :
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA
Abstract :
The current status of Heterojunction Bipolar and High-Electron Mobility Transistor technology is reviewed. Applications include analog and digital circuits with focus on high power and optical communications for HBT´s and millimeter-wave low-noise and power modules for HEMT´s. Material choices, designs, technology, reliability issues and circuit demonstrations are addressed.
Keywords :
Digital circuits; HEMTs; Heterojunctions; MODFETs; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Multichip modules; Optical fiber communication; Optical materials;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
