• DocumentCode
    3572240
  • Title

    Current Status of Heterojunction Bipolar and High-Electron Mobility Transistor Technologies

  • Author

    Pavlidis, Dimitris

  • Author_Institution
    Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA
  • fYear
    1992
  • Firstpage
    305
  • Lastpage
    312
  • Abstract
    The current status of Heterojunction Bipolar and High-Electron Mobility Transistor technology is reviewed. Applications include analog and digital circuits with focus on high power and optical communications for HBT´s and millimeter-wave low-noise and power modules for HEMT´s. Material choices, designs, technology, reliability issues and circuit demonstrations are addressed.
  • Keywords
    Digital circuits; HEMTs; Heterojunctions; MODFETs; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Multichip modules; Optical fiber communication; Optical materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572240