DocumentCode
3572282
Title
Process Integration for Barrier Layers and Al-Alloys using a Sputtering Cluster Tool
Author
Wendt, H. ; Willer, J. ; Emmer, D. ; Irl, S.
Author_Institution
Siemens AG, Zentralabt. Forschung und Entwicklung, Otto-Hahn-Ring 6,8000 M?ƒ??nchen 83, Germany.
fYear
1992
Firstpage
371
Lastpage
374
Abstract
This report describes an integrated Ti/TiN barrier and aluminum contact hole filling process that promises significant advantages in barrier layer quality and aluminum planarization. A process sequence in a cluster tool is developped that consists of a stress-free Ti/TiN barrier layer, a Ti interlayer of optimized thickness and an AlSiCu metallization that fills submicron contact holes and shows improved electromigration resistance.
Keywords
Aluminum; Atherosclerosis; Conductivity; Electromigration; Metallization; Reflectivity; Sputtering; Stress; Temperature distribution; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Print_ISBN
444894780
Type
conf
Filename
5435120
Link To Document