• DocumentCode
    3572298
  • Title

    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET

  • Author

    Buchali, F. ; Heedt, C. ; Prost, W. ; Gyuro, I. ; Meschede, H. ; Tegude, F.J.

  • Author_Institution
    Duisburg University, SFB 254, Kommandantenstr 60, D-4100 Duisburg, Germany
  • fYear
    1992
  • Firstpage
    401
  • Lastpage
    404
  • Abstract
    The leakage of reverse biased Schottky gates on lattice matched InAIAs/InGaAs HFET grown by MOVPE on s.i. InP subtsrates is adressed. The contribution of (i) (thermionic-) field emission across the Schottky barrier (ii) generation-recombination in the space charge region and (iii) impact ionization with subsequent hole tunneling are identified by means of their temperature dependence. Taking the overall importance of the gate to channel potential into account we will show that the leakage in biased HFET with a doping level ND ≪ 4*1018cm-3 is dominated by impact ionization.
  • Keywords
    Epitaxial growth; Epitaxial layers; Gate leakage; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572298