• DocumentCode
    3572317
  • Title

    Heterojunction bipolar transistors with Si1-x Gex base

  • Author

    Pruijmboom, A. ; Timmering, C.E. ; van Rooij-Mulder, J.M.L. ; Gravesteijn, D.J. ; de Boer, W.B. ; Kersten, W.J. ; Slotboom, J.W. ; Vriezema, C.J. ; de Kruif, R.

  • Author_Institution
    Philips Research Laboratories, P.O. Box 80000, 5600JA Eindhoven, The Netherlands.
  • fYear
    1992
  • Firstpage
    427
  • Lastpage
    433
  • Abstract
    Mesa-isolated bipolar transistors with strained Si1-xGez-base layers, grown by molecular beam epitaxy end atmospheric pressure chemical vapour deposition, have been fabricated. Results of structural and electrical analysis of transistors with implanted emitters and with phosphorus and arsenic-doped polysilicon emitters are presented.
  • Keywords
    Annealing; Bipolar transistors; Chemical analysis; Doping profiles; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Pressure control; Strain control; Thermal resistance; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572317