Title :
Characterisation of Heterojunction Bipolar Transistors incorporating Si/Si1-xGex epitaxial double layers with n+ emitter implants
Author :
Robbins, D.J. ; Leong, W Y ; Glasper, J L ; Pidduck, A.J. ; Jackson, R ; Post, I R C ; Shafi, Z A ; Ashburn, P.
Author_Institution :
Defence Research Agency, St Andrews Road, Malvern, WR14 3PS, United Kingdom
Abstract :
Transistors fabricated with systematic variations in Ge fraction, base doping and junction spacer width show near-ideal electrical characteristics. Emitter implantation generates anomalous boron diffusion in the base.
Keywords :
Annealing; Boron; Doping; Double heterojunction bipolar transistors; Electric variables; Germanium; Heterojunction bipolar transistors; Microelectronic implants; Silicon; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
