Title :
Nanotechnologies in semiconductor electronics
Author :
Pchelyakov, O.P. ; Toropov, A.I. ; Popov, V.P. ; Latyshev, A.V. ; Litvin, L.V. ; Nastaushev, Yu.V. ; Scheglov, D.V. ; Aseev, A.L.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The various technologies for fabrication micro- and nanosized systems included semiconductor, metal and insulator structures are reviewed on the base of the data obtained in Novosibirsk Institute of Semiconductor Physics. Main attention is devoted to development of method of molecular beam epitaxy, silicon-on-insulator fabrication process, electron beam lithography and scanning probe nanolithography.
Keywords :
electron beam lithography; molecular beam epitaxial growth; nanoelectronics; nanolithography; reviews; semiconductor growth; silicon-on-insulator; Novosibirsk Institute of Semiconductor Physics; electron beam lithography; insulator structures; metal structures; microsized systems; molecular beam epitaxy; nanosized systems; nanotechnologies; scanning probe nanolithography; semiconductor electronics; silicon-on-insulator fabrication process;
Conference_Titel :
Science and Technology, 2003. Proceedings KORUS 2003. The 7th Korea-Russia International Symposium on
Print_ISBN :
89-7868-617-6
