Dynamic effects in hot-carrier degradation relevant for CMOS operation

We describe different dynamic degradation effects in n- and p-MOSFETs as they are clearly proven and generally accepted to date. It turns out that they are connected with time constants in the oxide and at the interface and that time constants related to the device operation are too short to be relevant in this context. The effects are detrapping of fixed charges, the slow movement of holes in the oxide, an enhanced-degradation effect caused by alternating voltage conditions, during dynamic stress, and a post-stress interface state formation effect in nitride passivated n-MOSFETs. Furthermore, we discuss the relevance of those effects, under different operation conditions, finding that the fast non-stationary effects are of little significance. Only the ``slow´´ effects, with time constants of seconds and above, play a role in reliability issues of MOSFETs.