Pseudo-analytical modelling of stress dependent silicon oxidation

This paper proposes an alternative modelling approach for the inclusion of the stress effects in 2D local oxidation simulations. The stresses induced by the nitride mask are analytically deduced from the nitride bending, the oxidation temperature and the ID oxide thickness. The stresses are then accounting in the local effective oxidant diffusivity and the oxidation reaction rate. The LOCOS shapes computed with this analytical stress description are in good agreement with experiments and are similar to those obtained with a pure numerical approach but with a higher stability and a drastic C.P.U. time reducton.