DocumentCode
3572416
Title
High-speed, high-quality WEB NPN transistors with phosphorus emitters
Author
Nanver, L.K. ; Goudena, E.J.G. ; van Zeijl, H.W.
Author_Institution
Delft Institute for Microelectronics and Submicrontechnology. DIMES IC Process Research Sector, Delft University of Technology, P.O.Box 5053, 2600 GB Delft, The Netherlands
fYear
1992
Firstpage
539
Lastpage
542
Abstract
Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.
Keywords
Annealing; Capacitance; Degradation; Doping profiles; Epitaxial layers; Leakage current; Low voltage; Microelectronics; Tail; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Print_ISBN
444894780
Type
conf
Filename
5435155
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