• DocumentCode
    3572448
  • Title

    Hydrodynamic Simulation of an n-MOSFET at 77 K

  • Author

    Leone, A. ; Gnudi, A. ; Baccarani, G.

  • Author_Institution
    Dipartimento di Elettronica Informatica e Sistemistica, Universit?ƒ\xa0 di Bologna, viale Risorgimento 2, 40136 Bologna, Italy
  • fYear
    1992
  • Firstpage
    291
  • Lastpage
    294
  • Abstract
    The feasibility of and the numerical problems related with the hydrodynamic simulation of semiconductor devices operating at liquid nitrogen temperature are investigated. The model includes electron energy balance, degeneracy effects due to Fermi statistics as well as incomplete ionization. Simulation results of a submicron MOSFET are discussed.
  • Keywords
    Charge carrier processes; Electrons; High definition video; Hydrodynamics; Ionization; MOSFET circuits; Mathematical model; Poisson equations; Statistics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435166
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572448