• DocumentCode
    3572451
  • Title

    Hydrodynamic Simulation of Hysteresis Phenomena in SOI MOSFET Characteristics

  • Author

    Bork, I. ; Meinerzhagen, B. ; Engl, W.L.

  • Author_Institution
    Institut f?ƒ??r Theoretische Elektrotechnik, University of Aachen, Kopernikusstr. 16, 5100 Aachen, W-Germany, Phone: +49 241 80 3905
  • fYear
    1992
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    The robustness of a new algorithm solving the two carrier hydrodynamic equation set is investigated by means of hysteresis phenomena in SOI MOSFET. In addition the differences in impact ionization modeling between drift diffusion and hydrodynamic model are shown.
  • Keywords
    Charge carrier processes; Energy conservation; Equations; High definition video; Hydrodynamics; Hysteresis; Impact ionization; MOSFET circuits; Robust control; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572451