Title :
Hydrodynamic Simulation of Hysteresis Phenomena in SOI MOSFET Characteristics
Author :
Bork, I. ; Meinerzhagen, B. ; Engl, W.L.
Author_Institution :
Institut f?ƒ??r Theoretische Elektrotechnik, University of Aachen, Kopernikusstr. 16, 5100 Aachen, W-Germany, Phone: +49 241 80 3905
Abstract :
The robustness of a new algorithm solving the two carrier hydrodynamic equation set is investigated by means of hysteresis phenomena in SOI MOSFET. In addition the differences in impact ionization modeling between drift diffusion and hydrodynamic model are shown.
Keywords :
Charge carrier processes; Energy conservation; Equations; High definition video; Hydrodynamics; Hysteresis; Impact ionization; MOSFET circuits; Robust control; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
