Ensemble Monte Carlo Simulation of a Pulse-Doped GaAs MESFET with a Doped-Layer of 100A

The highly degenerate two-dimensional electron gas confined in the pulse-doped GaAs MESFET with a doped-layer of 100A and the device characteristics have been studied for the first time by a self-consistent calculation of the Poisson´s and Schrodinger´s equations and using the ensemble Monte Carlo silmulation, respectively. It has been shown that the present results well agree with the experiments on the subband structures by Schubnikov-de Haas measurements, the electron density profile, the velocity-field characteristics and the current-voltage characteristics.