Title :
Analysis of Short Channel Effects in Poly-Si Thin Film Transistors: A New Method
Author :
Reita, C. ; Migliorato, Piero ; Pecora, A. ; Fortunato, G. ; Mariucci, L.
Author_Institution :
GEC-Marconi Hirst Research Centre, East Lane, Wembley, Middlsex, HA9 7PP, U.K.
Abstract :
Output characteristics of poly-Si thin film transistors (TFTs) have been measured for different channel length and temperature and a ``kink´´ is observed similar to the one reported for SOI MOSFETs. The effect is explained using a new analytical model which is possible to implement in a circuit simulator.
Keywords :
Analog circuits; Analytical models; Chemical vapor deposition; Circuit simulation; Length measurement; Microelectronics; Plasma measurements; Plasma temperature; Temperature measurement; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
