• DocumentCode
    3572602
  • Title

    Isolation design comparisons for 0.5 μm CMOS technology using SILO process

  • Author

    Guegan, G. ; Deleonibus, S. ; Lerme, M. ; Blanc, P.

  • Author_Institution
    LETI (CEA-Technologies Avanc?ƒ?©es), CEN/G-85X - F38041 Grenoble Cedex
  • fYear
    1992
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    SILO process with R.T.N. of silicon is an alternative isolation scheme, which provides both small field encroachment and rigorous isolation with 0.8 μm active area spacing. Two field doping processes were developed for 0.5 μm CMOS technology and were extensively compared.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572602