Title :
GaInAs/GaInAsP SCH-MQW-laser emitting at 1.35 μm grown by LP-MOVPE
Author :
Stollenwerk, M. ; Gr?¼tzmacher, D. ; M?¶hrle, M. ; Fidorra, F. ; Heime, K.
Author_Institution :
Institut f?ƒ??r Halbleitertechnik, RWTH Aachen, Sommerfeldstra?ƒ\x9fe, 5100 Aachen, FRG
Abstract :
In conclusion we have demonstrated that GaInAs/GaInAsP MQW can be grown by LP-MOVPE with abrupt heterointerfaces and a control of the well width within one monolayer. Due to this precise control we obtained very low threshold current densities for GaInAs/GaInAsP-MQW lasers with wells of only 4 monolayer thickness. The best threshold current density of 800 A/cm2 is obtained for 4 wells separated by 15 nm barriers.
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
