• DocumentCode
    3572720
  • Title

    GaInAs/GaInAsP SCH-MQW-laser emitting at 1.35 μm grown by LP-MOVPE

  • Author

    Stollenwerk, M. ; Gr?¼tzmacher, D. ; M?¶hrle, M. ; Fidorra, F. ; Heime, K.

  • Author_Institution
    Institut f?ƒ??r Halbleitertechnik, RWTH Aachen, Sommerfeldstra?ƒ\x9fe, 5100 Aachen, FRG
  • fYear
    1991
  • Firstpage
    263
  • Lastpage
    266
  • Abstract
    In conclusion we have demonstrated that GaInAs/GaInAsP MQW can be grown by LP-MOVPE with abrupt heterointerfaces and a control of the well width within one monolayer. Due to this precise control we obtained very low threshold current densities for GaInAs/GaInAsP-MQW lasers with wells of only 4 monolayer thickness. The best threshold current density of 800 A/cm2 is obtained for 4 wells separated by 15 nm barriers.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Print_ISBN
    444890661
  • Type

    conf

  • Filename
    5435330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572720