3572725

Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material

Keith, S. ; Bufler, F.M. ; Meinerzhagen, B.

Universit¨at Bremen, Germany

1997

200

203

Buffer layers; Doping; Electron mobility; Electronic design automation and methodology; Germanium silicon alloys; MOSFET circuits; Monte Carlo methods; Predictive models; Silicon germanium; Threshold voltage;

English

ieee

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

2-86332-221-4

conf

10.1109/ESSDERC.1997.194400

1503330