DocumentCode
3572740
Title
Measurement of SOI Film Thickness
Author
Badenes, G. ; Abel, H.B. ; Gassel, H. ; Burbach, G. ; Vogt, H.
Author_Institution
Centre Nacional de Microelectr?ƒ?²nica CNM-CSIC, Campus U.A.B., E-08193 Bellaterra, Spain; Fraunhofer-Institut IMS, Finkenstra?ƒ\x9fe 61, D-4100 Duisburg 1, Germany
fYear
1991
Firstpage
207
Lastpage
210
Abstract
A new electrical, nondestructive measurement technique that allows for a fast and reliable determination of the silicon thickness in fully depletable silicon on insulator capacitors is presented. This technique is based on a simple 2-terminal high frequency C(V) measurement performed on an SOI capacitor with film contact. The method is illustrated on devices built on SIMOX substrates.
Keywords
Capacitance measurement; Capacitors; Current measurement; Electric variables measurement; Frequency measurement; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Substrates; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Print_ISBN
444890661
Type
conf
Filename
5435339
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