• DocumentCode
    3573181
  • Title

    Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact Regrowth

  • Author

    Driad, R. ; Duchenois, A.M. ; Menouni, M. ; Alexandre, F. ; Legay, P. ; Launay, P.

  • Author_Institution
    FRANCE TELECOM, Centre National d´´Etudes des T?l?communications, Paris B, Laboratoire de Bagneux, 196 avenue Henri Rav?ra, BP 107, 92225 Bagneux (France).
  • fYear
    1994
  • Firstpage
    451
  • Lastpage
    454
  • Abstract
    This paper describes a self-aligned AlGaAs/GaAs heterojunction bipolar transistor technology using selective chemical beam epitaxy. The process is achieved by a selective regrowth of the extrinsic base layer. Digital circuits and laser drivers operating at 10 Gb/s have been successfully demonstrated for the first time with this process.
  • Keywords
    Chemical technology; Circuits; Doping; Epitaxial growth; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Print_ISBN
    863321579
  • Type

    conf

  • Filename
    5435757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573181