Title :
Temperature Dependence of Fowler-Nordheim Emission Tunneling Current in MOS Structures
Author :
Kies, R. ; Papadas, C. ; Pananakakis, G. ; Ghibaudo, G.
Author_Institution :
LPCS, ENSERG, URA C NRS, BP 257, 38016 Grenoble, France
Abstract :
The temperature dependence of the Fowler-Nordheim tunnel current in a MOS structure is investigated both theoretically and experimentally between 25° C and 400°C. The F-N current is found to increase substantially with temperature. The existence of effective pre-exponential and exponential F-N coefficients up to 400°C is demonstrated and validated by numerical simulations based on the general F-N current model.
Keywords :
EPROM; Electrodes; Electron emission; Linear predictive coding; Microelectronics; Silicon; Statistics; Temperature dependence; Temperature distribution; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
