DocumentCode
3573220
Title
Thin Oxide MOS Damages Caused by Wafer Charging in Magnetized Helium Plasma
Author
Atanassova, E.
Author_Institution
Institute of Solid-State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Blvd, Sofia 1784, BULGARIA
fYear
1994
Firstpage
511
Lastpage
514
Abstract
The effect of nonuniform He plasma on the properties of thin Si - SiO2 structures has been studied. The plasma reactor system used is a magnetically enhanced like reactive ion etch reactor. The damage effects in MOS structures were determined as a function of Al gate thickness (60 - 1000nm) and plasma parameters. The results indicate strong correlation between plasma induced charge build-up and Al gate thickness. The role of plasma nonuniformity as well as VUV are discussed.
Keywords
Electrodes; Etching; Helium; Inductors; Plasma applications; Plasma confinement; Plasma density; Plasma devices; Plasma materials processing; Plasma properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Print_ISBN
863321579
Type
conf
Filename
5435771
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