Homogenous Hot Hole Injection by Tunnelling in Gate Oxides of CMOS Devices

Substrate hot hole injection was used to investigate hole trapping in thin oxides of MOS transistors. It has been found that tunnelling hole injection into the oxide may take place at hole energies much lower than that needed for over-the-barrier emission. Resulting threshold voltage shift and hole detrapping kinetics during subsequent high-field electron injection indicate different amount and distribution of trapped positive charge for devices subjected to injection of holes with different energies.