Title :
A Novel Bipolar Device on SOI Wafers for Analog BICMOS Applications
Author :
Yallup, Kevin ; Edwards, Susan ; Creighton, Oliver
Author_Institution :
Analog Devices, Raheen Industrial Estate, Limerick, IRELAND
Abstract :
This work describes a novel bipolar transistor structure that can be fabricated on SOI wafers. The device combines a vertical base current flow path with a lateral collector flow path and is best suited to SOI layers in the thickness range from 0.2¿m to 5¿m.
Keywords :
Analog circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Doping; Semiconductor films; Silicon devices; Textile industry; Voltage; Wafer bonding;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
