DocumentCode
3573269
Title
Thin Film Transistor Fabrication with in-situ Sequential Processing
Author
Quinn, L.J. ; Baine, P.T. ; Mitchell, S.J.N. ; Armstrong, B.M. ; Gamble, H.S.
Author_Institution
Northern Ireland Semiconductor Research Centre, Department of Electrical and Electronic Engineering, Queen´´s University of Belfast, Belfast BT9 5AH.
fYear
1994
Firstpage
581
Lastpage
584
Abstract
A multi processing technique has been employed to fabricate thin film transistors with minimal interfacial defects. Polysilicon films with high quality grains for improved filed effect mobility and plasma enhanced silicon nitride for passivation and dielectric purposes have been deposited sequentially without the removal of the substrate from vacuum. TFT´s fabricated with a nitride dielectric in a multiprocessing environment are shown to have improved characteristics compared to those produced with a thermal oxide.
Keywords
Dielectric devices; Dielectric substrates; Fabrication; Glass; Liquid crystal displays; Plasma properties; Plasma temperature; Semiconductor films; Silicon; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Print_ISBN
863321579
Type
conf
Filename
5435785
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