Title :
Thin Film Transistor Fabrication with in-situ Sequential Processing
Author :
Quinn, L.J. ; Baine, P.T. ; Mitchell, S.J.N. ; Armstrong, B.M. ; Gamble, H.S.
Author_Institution :
Northern Ireland Semiconductor Research Centre, Department of Electrical and Electronic Engineering, Queen´´s University of Belfast, Belfast BT9 5AH.
Abstract :
A multi processing technique has been employed to fabricate thin film transistors with minimal interfacial defects. Polysilicon films with high quality grains for improved filed effect mobility and plasma enhanced silicon nitride for passivation and dielectric purposes have been deposited sequentially without the removal of the substrate from vacuum. TFT´s fabricated with a nitride dielectric in a multiprocessing environment are shown to have improved characteristics compared to those produced with a thermal oxide.
Keywords :
Dielectric devices; Dielectric substrates; Fabrication; Glass; Liquid crystal displays; Plasma properties; Plasma temperature; Semiconductor films; Silicon; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
