Analysis of Electromigration Lifetime Measurements using Microscopic Polycrystalline Computer Simulation

Three time-to-failure (TTF) electromigration reliability models (based on different assumptions) used in the analysis of experimental data to determine interconnect reliability are compared using a new computer model for simulating failure in polycrystalline thin film conductors. The inclusion of backflux in the model and the use of ambient or conductor temperature on the extracted failure parameters have also been studied. The results demonstrate the limitations and unsuitability of previous models in extracting certain material parameters and suggest the need for including backflux in future electromigration studies.