• DocumentCode
    3573306
  • Title

    Small and Large Signal Model of a 150 GHz InAIAs/InGaAs HEMT

  • Author

    Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B.-U.H. ; Baechtold, W.

  • Author_Institution
    Microelectronics Institute, University of Linz, Altenberger Strasse 69, A-4040 Linz, Austria
  • fYear
    1994
  • Firstpage
    623
  • Lastpage
    626
  • Abstract
    A technology for producing high-speed MMICs utilizing InAlAs/InGaAs HEMTs has been established at our laboratory. In order to simulate circuits that exploit the nonlinear behaviour of the transistors, a large signal model of these HEMTs has been developed that describes device characteristics both in ohmic and saturation regime.
  • Keywords
    Circuit noise; Current measurement; Electrical resistance measurement; Equivalent circuits; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Noise measurement; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Print_ISBN
    863321579
  • Type

    conf

  • Filename
    5435794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573306