Title :
State of the Art AlInAs/GaInAs/InP HEMTs Fabricated using an Experimental Electron-Beam Lithography System
Author :
Patrick, W. ; Bergamaschi, C. ; Klepser, B-U. ; Meier, Hp. ; B?¤chtold, W.
Author_Institution :
Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology, ETH, Gloriastrasse 35, CH-8092 Z?ƒ??rich.
Abstract :
A process is described for fabricating high performance InP HEMT devices and circuits, using relatively straightforward technologies. 0.25 ¿m devices yield a transit frequency of 150 GHz, which is the highest reported value for this gate-length. The process is suitable for fabricating prototype microwave and millimetre-wave circuits.
Keywords :
Circuits; Dielectric thin films; Fabrication; Frequency; HEMTs; Indium phosphide; Lithography; MODFETs; Microwave devices; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
